The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
Dec. 16, 2019
Sumitomo Electric Industries, Ltd., Osaka, JP;
Isao Makabe, Osaka, JP;
Ken Nakata, Osaka, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Abstract
A method for manufacturing a nitride semiconductor device includes the steps of growing a GaN channel layer on an SiC substrate using a vertical MOCVD furnace set at a first temperature using Has a carrier gas, and TMG and NHas raw materials, holding the SiC substrate having the grown GaN channel layer in the MOCVD furnace set at a second temperature higher than the first temperature using Has a carrier gas, the MOCVD furnace being supplied with NH, and growing an InAlN layer on the GaN channel layer using the MOCVD furnace set at a third temperature lower than the first temperature using Nas a carrier gas, and TMI, TMA, and NHas raw materials.