The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Jun. 17, 2022
Applicant:

Iii Holdings 2, Llc, Wilmington, DE (US);

Inventor:

Michael C. Stephens, Jr., Los Gatos, CA (US);

Assignee:

III HOLDINGS 2, LLC, Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/30 (2006.01); G11C 5/02 (2006.01); G11C 5/04 (2006.01); G11C 5/06 (2006.01); G11C 5/14 (2006.01); G11C 7/10 (2006.01); G11C 7/22 (2006.01); G11C 11/401 (2006.01); G11C 11/406 (2006.01); G11C 11/4076 (2006.01); G11C 11/4093 (2006.01); G11C 11/4094 (2006.01); G11C 15/00 (2006.01); G11C 29/02 (2006.01); G11C 29/50 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4076 (2013.01); G11C 5/02 (2013.01); G11C 5/04 (2013.01); G11C 5/06 (2013.01); G11C 5/063 (2013.01); G11C 5/14 (2013.01); G11C 7/10 (2013.01); G11C 7/106 (2013.01); G11C 7/22 (2013.01); G11C 11/401 (2013.01); G11C 11/40615 (2013.01); G11C 11/40622 (2013.01); G11C 11/4093 (2013.01); G11C 11/4094 (2013.01); G11C 15/00 (2013.01); G11C 16/30 (2013.01); G11C 29/023 (2013.01); G11C 29/028 (2013.01); G11C 29/50016 (2013.01); G11C 5/147 (2013.01); G11C 7/222 (2013.01); G11C 11/406 (2013.01); G11C 2029/4402 (2013.01); G11C 2211/4061 (2013.01); G11C 2211/4067 (2013.01); G11C 2213/71 (2013.01); H01L 2224/16145 (2013.01);
Abstract

Disclosed are various embodiments related to stacked memory devices, such as DRAMs, SRAMs, EEPROMs, ReRAMs, and CAMs. For example, stack position identifiers (SPIDs) are assigned or otherwise determined, and are used by each memory device to make a number of adjustments. In one embodiment, a self-refresh rate of a DRAM is adjusted based on the SPID of that device. In another embodiment, a latency of a DRAM or SRAM is adjusted based on the SPID. In another embodiment, internal regulation signals are shared with other devices via TSVs. In another embodiment, adjustments to internally regulated signals are made based on the SPID of a particular device. In another embodiment, serially connected signals can be controlled based on a chip SPID (e.g., an even or odd stack position), and whether the signal is an upstream or a downstream type of signal.


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