The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Mar. 27, 2020
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Tatsuya Yanagi, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); G01R 31/12 (2020.01);
U.S. Cl.
CPC ...
G01R 31/2623 (2013.01); G01R 31/12 (2013.01);
Abstract

For example, a method of measuring a device parameter includes: a step of repeatedly measuring the gate-source voltage (or gate-emitter voltage) of a switching element in its switching transient state while switching the external gate resistance for the switching element among m resistance values (where m is an integer of three or more); and a step of, while representing the internal gate resistance and the plateau voltage of the switching element by Rgin and Vp respectively and using the m resistance values of the external gate resistance and corresponding m voltage values of the gate-source voltage (or gate-emitter voltage) as Rg(k) and Vgs(k) respectively (where k=1, 2 . . . m), performing the fitting of the equation Vgs(k)=Rg(k)/(Rg(k)+Rgin)×Vp, thereby to derive the internal gate resistance Rgin or the plateau voltage Vp of the switching element.


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