The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
Sep. 23, 2020
Tokuyama Corporation, Yamaguchi, JP;
Tomoaki Sato, Yamaguchi, JP;
Yuki Kikkawa, Yamaguchi, JP;
Takafumi Shimoda, Yamaguchi, JP;
Takayuki Negishi, Yamaguchi, JP;
TOKUYAMA CORPORATION, Yamaguchi, JP;
Abstract
Provided are an inhibitor for RuOgas generation used in a manufacturing process of a semiconductor element, that inhibits a RuOgas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuOgas. Specifically, provided is an inhibitor for RuOgas generation for inhibiting a RuOgas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuOgas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.