The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
Feb. 22, 2019
Applicant:
Sumitomo Precision Products Co., Ltd., Hyogo, JP;
Inventors:
Gen Matsuoka, Hyogo, JP;
Mario Kiuchi, Hyogo, JP;
Assignee:
SUMITOMO PRECISION PRODUCTS CO., LTD., Hyogo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01); G02B 26/04 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00666 (2013.01); B81B 3/0072 (2013.01); G02B 26/04 (2013.01); B81B 2201/031 (2013.01); B81B 2201/042 (2013.01); B81C 2201/017 (2013.01);
Abstract
Provided is a method including at least the thermal treatment step of thermally treating a SOI substrate having a first silicon layer at a first temperature that the diffusion flow rate of an interstitial silicon atom in a silicon single crystal is higher than the diffusion flow rate of an interstitial oxygen atom and the processing step of processing the SOI substrate after the thermal treatment step to obtain a displacement enlarging mechanism.