The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2024
Filed:
Nov. 09, 2021
National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);
Albert Alec Talin, Dublin, CA (US);
Elliot James Fuller, Livermore, CA (US);
Christopher Bennett, Albuquerque, NM (US);
Tianyao Xiao, Albuquerque, NM (US);
Matthew Marinella, Gilbert, AZ (US);
Suhas Kumar, Mountain View, CA (US);
National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (US);
Abstract
An ionic redox transistor comprises a solid channel, a solid reservoir layer, and a solid electrolyte layer disposed between the channel and the reservoir layer. The channel exhibits a substantially linear current-voltage relationship in a first range of voltages, and a nonlinear current-voltage relationship in a second range of voltages that is greater than the first range of voltages. One or both of the substantially linear current-voltage relationship or the nonlinear current-voltage relationship of the channel is varied by changing the concentration of ions such as oxygen vacancies in the channel. Ion or vacancy transport between the channel and the reservoir layer across the electrolyte layer occurs in response to applying a voltage between the channel and the reservoir layer. Subject to the first range of voltages, the channel can function as a synapse device. Subject to the second range of voltages, the channel can function as a neuron device.