The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Dec. 06, 2022
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Kun Young Lee, Icheon-si, KR;

Changhan Kim, Icheon-si, KR;

Sung Hyun Yoon, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/20 (2023.01); H10B 51/10 (2023.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H10B 51/10 (2023.02);
Abstract

A semiconductor device includes a stacked structure including conductive layers and gaps respectively interposed between the conductive layers, a channel layer passing through the stacked structure, a ferroelectric layer surrounding a sidewall of the channel layer, and first dielectric patterns interposed between the ferroelectric layer and the conductive layers, respectively. The gaps extending between the first dielectric patterns.


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