The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Nov. 06, 2018
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Nobuyuki Ogawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01S 5/02 (2006.01); H01S 5/02335 (2021.01); H01S 5/02345 (2021.01); H01S 5/028 (2006.01); H01S 5/042 (2006.01); H01S 5/026 (2006.01); H01S 5/062 (2006.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
H01S 5/04256 (2019.08); H01L 31/02005 (2013.01); H01S 5/0203 (2013.01); H01S 5/02335 (2021.01); H01S 5/02345 (2021.01); H01S 5/028 (2013.01); H01S 5/0268 (2013.01); H01S 5/06213 (2013.01); H01S 5/06226 (2013.01); H01S 5/4087 (2013.01);
Abstract

An optical semiconductor device includes an optical semiconductor chip in which at least one optical element is formed in a semiconductor substrate, and an extended wire pattern that is connected to a first electrode and a second electrode of the optical element and that extends outside the optical semiconductor chip. The first electrode and the second electrode of the optical semiconductor device are formed on the front surface side of the optical semiconductor chip, and the extended wire pattern is disposed on the front surface of the optical semiconductor chip or disposed at a position apart from the front surface.


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