The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Dec. 31, 2021
Applicant:

Contemporary Amperex Technology Co., Limited, Ningde, CN;

Inventors:

Zhiqiang Li, Ningde, CN;

Qifeng Li, Ningde, CN;

Changlong Han, Ningde, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/36 (2006.01); H01M 4/04 (2006.01); H01M 4/505 (2010.01); H01M 4/525 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/366 (2013.01); H01M 4/0404 (2013.01); H01M 4/505 (2013.01); H01M 4/525 (2013.01); H01M 2004/021 (2013.01); H01M 2004/028 (2013.01); H01M 2220/20 (2013.01);
Abstract

A lithium-ion secondary battery and related preparation method thereof, battery module, battery pack and apparatus. The lithium-ion secondary battery includes a positive electrode plate, a negative electrode plate, an electrolyte and a separator, wherein the positive electrode plate includes a positive electrode current collector and a first positive electrode active material layer and a second positive electrode active material layer sequentially disposed on at least one side of the positive electrode current collector; the lithium-ion secondary battery satisfies: −1≤log(u/v)×w≤15.5, wherein, u is a thickness of the first positive electrode active material layer in microns, v is a thickness of the second positive electrode active material layer in microns, w is a conductivity of the electrolyte at a temperature of 25° C. in mS·cm. The lithium-ion secondary battery has excellent performance such as low discharge resistance at low SOC and low gas production at high temperature.


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