The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Apr. 09, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

JuHeon Yoon, Seoul, KR;

Jung Hwan Kil, Suwon-si, KR;

Tae Hun Kim, Bucheon-si, KR;

Hwa Ryong Song, Osan-si, KR;

Jae In Sim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/22 (2010.01); H01L 33/38 (2010.01); H01L 33/42 (2010.01); H01L 33/46 (2010.01); H01L 33/50 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/22 (2013.01); H01L 33/42 (2013.01); H01L 33/46 (2013.01); H01L 33/502 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.


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