The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2024
Filed:
Apr. 15, 2021
Applicant:
James Dalton Bell, Vancouver, WA (US);
Inventor:
James Dalton Bell, Vancouver, WA (US);
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01G 4/10 (2006.01); H01L 49/02 (2006.01); C01G 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/517 (2013.01); H01G 4/10 (2013.01); H01L 28/60 (2013.01); C01G 27/02 (2013.01);
Abstract
Various methods and systems are provided for facilitating the creation of a new and potentially thinner form of dielectric. Alternatively, for a given capacitance, a thicker layer can be created with lower risk of leakage. The present disclosure will enable the creation of physically smaller electronic components. Isotope-Modified Hafnium Dielectric is used to create a dielectric layer with a greater range of dielectric coefficients, which may enable the creation of smaller and/or more reliable electronic components.