The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2024
Filed:
Sep. 10, 2021
Applicants:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Inventors:
Masaharu Shimabayashi, Kanazawa Ishikawa, JP;
Tatsuya Shiraishi, Nonoichi Ishikawa, JP;
Assignees:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 29/407 (2013.01); H01L 29/512 (2013.01); H01L 29/513 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 21/28194 (2013.01); H01L 21/28202 (2013.01); H01L 21/28229 (2013.01); H01L 29/518 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes: forming a trench in a semiconductor layer of first conductivity type; in the trench, forming a first layer containing silicon and then forming a second layer containing first oxide or nitride on the first layer or forming the second layer and then forming the first layer on the second layer; and thermally oxidizing the first layer.