The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2024
Filed:
Oct. 14, 2021
Applicant:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Inventors:
Yusuke Tanaka, Kanagawa, JP;
Takashi Nagano, Kanagawa, JP;
Toshifumi Wakano, Kanagawa, JP;
Takeshi Matsunuma, Kanagawa, JP;
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/146 (2006.01); H01L 29/78 (2006.01); H04N 25/62 (2023.01); H04N 25/70 (2023.01); H04N 25/79 (2023.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H04N 25/75 (2023.01); H04N 25/76 (2023.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14634 (2013.01); H01L 27/14641 (2013.01); H01L 27/14683 (2013.01); H01L 27/1469 (2013.01); H04N 25/62 (2023.01); H04N 25/70 (2023.01); H04N 25/79 (2023.01); H01L 27/14643 (2013.01); H01L 27/14649 (2013.01); H01L 27/14689 (2013.01); H01L 29/0649 (2013.01); H01L 29/4991 (2013.01); H01L 29/515 (2013.01); H01L 29/7841 (2013.01); H04N 25/75 (2023.01); H04N 25/76 (2023.01); H10B 12/20 (2023.02);
Abstract
There is provided a solid-state image-capturing element capable of reducing the capacitance by using a hollow region. At least a part of a region between an FD wiring connected to a floating diffusion and a wiring other than the FD wiring is a hollow region. The present disclosure can be applied to a CMOS image sensor having, for example, a floating diffusion, a transfer transistor, an amplifying transistor, a selection transistor, a reset transistor, and a photodiode.