The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Mar. 15, 2023
Applicant:

Sony Group Corporation, Tokyo, JP;

Inventor:

Tetsuji Yamaguchi, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/101 (2006.01); H04N 9/64 (2023.01); H04N 23/75 (2023.01); H04N 23/88 (2023.01); H04N 25/11 (2023.01); H04N 25/70 (2023.01); H04N 25/71 (2023.01); H04N 25/711 (2023.01); H04N 25/75 (2023.01); H10K 39/32 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); H01L 27/14638 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14647 (2013.01); H01L 31/1013 (2013.01); H04N 9/646 (2013.01); H04N 23/75 (2023.01); H04N 23/88 (2023.01); H04N 25/11 (2023.01); H04N 25/70 (2023.01); H04N 25/71 (2023.01); H04N 25/711 (2023.01); H04N 25/75 (2023.01); H10K 39/32 (2023.02);
Abstract

The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. The solid-state imaging device includes a semiconductor layer in which a surface side becomes a circuit formation surface, photoelectric conversion units PDand PDof two layers or more that are stacked and formed in the semiconductor layer, and a longitudinal transistor Trin which a gate electrode is formed to be embedded in the semiconductor layer from a surface of the semiconductor layer. The photoelectric conversion unit PDof one layer in the photoelectric conversion units of the two layers or more is formed over a portion of the gate electrode of the longitudinal transistor Trembedded in the semiconductor substrate and is connected to a channel formed by the longitudinal transistor Tr


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