The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Nov. 23, 2021
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Joung Cheul Choi, Daejeon, KR;

Jae Young You, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0259 (2013.01); H01L 29/0821 (2013.01); H01L 29/6625 (2013.01); H01L 29/735 (2013.01);
Abstract

A semiconductor integrated circuit device may include a semiconductor substrate, an active well, an emitter, a base, a collector, a body contact region, and a blocking well. The semiconductor substrate may have a first conductive type. The active well may be formed in the semiconductor substrate. The active well may have a second conductive type. The emitter and the base may be formed in the active well. The collector may be formed in the semiconductor substrate outside the active well. The body contact region may be formed in the semiconductor substrate to electrically connect the collector with the semiconductor substrate. The body contact region may have a conductive type substantially the same as that of the collector. The blocking well may be configured to surround an outer wall of the body contact region. The blocking well may have the second conductive type.


Find Patent Forward Citations

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Choi, Joung. (2024). Semiconductor integrated circuit device having an electrostatic discharge protection circuit and method of manufacturing the semiconductor integrated circuit device (U.S. Patent No. 11929362). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11929362

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