The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Nov. 22, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Andre Schmenn, Sachsenkam, DE;

Klaus Diefenbeck, Munich, DE;

Joost Adriaan Willemen, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/822 (2006.01); H01L 23/482 (2006.01); H01L 27/02 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4825 (2013.01); H01L 21/822 (2013.01); H01L 27/0292 (2013.01); H01L 21/56 (2013.01); H01L 27/0255 (2013.01);
Abstract

In a method for manufacturing an electrostatic discharge protection circuit, an electrostatic discharge device structure is formed during a front side processing of a semiconductor substrate in a first area. Contact pads are formed on the front side on the electrostatic discharge device structure and in a second area. During back side processing of the semiconductor substrate, a metal connection between the first electrostatic discharge device structure and the second area is formed.


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