The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Feb. 08, 2022
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Huilong Zhu, Poughkeepsie, NY (US);

Tianchun Ye, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/46 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/46 (2013.01); H01L 21/4871 (2013.01);
Abstract

A semiconductor apparatus with a heat dissipation conduit in a sidewall interconnection structure, a method of manufacturing the semiconductor apparatus, and an electronic device including the semiconductor apparatus. According to the embodiments, the semiconductor apparatus includes: a carrier substrate having a first region and a second region adjacent to each other; a semiconductor device on the first region; and an interconnection structure on the second region, wherein the interconnection structure includes: an electrical isolation layer; a conductive structure in the electrical isolation layer, wherein at least a part of components require to be electrically connected in the semiconductor device is in contact with and therefore electrically connected to the conductive structure in a lateral direction, wherein the conductive structure is located at a corresponding height in the interconnection structure; and a heat dissipation conduit in the electrical isolation layer.


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