The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Apr. 05, 2021
Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota, JP;

Inventor:

Hayate Yamano, Susono, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 14/08 (2006.01); C23C 14/28 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); H01L 21/02595 (2013.01); H01L 21/02631 (2013.01); H01L 29/24 (2013.01);
Abstract

To provide a gallium oxide-based semiconductor with its bandgap being sufficiently reduced, and a manufacturing method thereof. A gallium oxide-based semiconductor containing a mixed crystal having a composition represented by (GaFe)O, wherein 0.10≤x≤0.40 and 0.85≤y≤1.2, wherein the mixed crystal has a beta-gallia structure, is provided. Also, a method for manufacturing the gallium oxide-based semiconductor, including depositing a mixed crystal having a composition represented by (GaFe)O, wherein 0.10≤x≤0.40 and 0.85≤y≤1.2 on a substrate surface by a pulsed laser deposition method, wherein denoting the temperature of the substrate as T° C., x and T satisfy the relationship represented by 500x+800≤T<1,000, is provided.


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