Methods of tuning to improve plasma stability

Abstract

Embodiments described herein relate to methods of tuning within semiconductor processes to improve plasma stability. In these embodiments, multiple matching networks are provided. Each of the matching networks couple a radio frequency (RF) source to one of multiple connection points located on an electrode. Based on tuning parameter information and physical geometry information, a controller determines a tuning sequence for the multiple matching networks. As such, some of the matching networks are tuned while the other matching networks are locked. Using multiple matching networks leads to a more uniform plasma within the process volume of the process chamber. Improved plasma uniformity leads to less substrate defects and better device performance. Additionally, in these embodiments, the ability to tune each of the matching networks in a sequence decreases or prevents interference from occurring between the matching networks.