The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11927649 B1

Date of Patent:

Mar. 12, 2024

Filed:

Mar. 08, 2021

Magnetoresistance effect element

Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Shogo Yonemura, Tokyo, JP;

Tomoyuki Sasaki, Tokyo, JP;

Shinto Ichikawa, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Marcos D Pizarro

Int. Cl.

CPC ...

G01R 33/09 (2006.01); G11B 5/39 (2006.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);

U.S. Cl.

CPC ...

G01R 33/093 (2013.01); G01R 33/098 (2013.01); G11B 5/3909 (2013.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);

Abstract

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an insertion layer that is disposed at least one of a position between the first ferromagnetic layer and the nonmagnetic layer and a position between the second ferromagnetic layer and the nonmagnetic layer, in which the nonmagnetic layer is composed of an oxide containing Mg and Ga, and the insertion layer is a ferromagnetic component containing Ga.

Find Patent Forward Citations

Yonemura, Shogo. (2024). Magnetoresistance effect element (U.S. Patent No. 11927649). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11927649

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