The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2024
Filed:
Jun. 04, 2019
Mitsubishi Electric Corporation, Tokyo, JP;
Nicolas Degrenne, Rennes, FR;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
Power semi-conductor module () comprising: —at least one IGBT with a Gate G forming a first electrode () and an Emitter E forming a second electrode (), or —at least one MOSFET with a Gate G forming a first electrode () and a Source S forming a second electrode (). The first electrode () includes a polysilicon material made in one piece. The one-piece is made partly of a monitoring portion (). The monitoring portion () is in electrical contact with the second electrode () such that a leakage current flows between the first electrode () and the second electrode () in an operational state of the module (). The monitoring portion () has a location, a form, a size and a material composition selected together such that to have a variable resistance in function of its temperature during the operational state of the module ().