The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2024
Filed:
Nov. 10, 2021
Luxembourg Institute of Science and Technology (List), Eschsur-Alzette, LU;
Cesar Pascual Garcia, Esch sur Alzette, LU;
Damien Lenoble, Esch sur Alzette, LU;
LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST), Eschsur-Alzette, LU;
Abstract
A pH sensor comprises: a chamber for receiving an electrolyte solution; a first and a second ion-sensitive field effect transistor (ISFETs), each of the first and second ISFETs having a source terminal, a drain terminal and a transistor channel extending between the source terminal and the drain terminal, a dielectric layer with a sensing surface arranged in the chamber so as to be contactable by the electrolyte solution, the dielectric layer separating the sensing surface from the transistor channel; a first measurement circuit configured to measure a first source-drain resistance across the transistor channel of the first ISFET; and a second measurement circuit configured to measure a second source-drain resistance across the transistor channel of the second ISFET. The first and second measurement circuits include a common reference electrode, the reference electrode arranged contactable by the electrolyte solution in the chamber. The dielectric layer of first ISFET has a first thickness and the dielectric layer of the second ISFET has a second thickness different from the first thickness.