The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2024
Filed:
Oct. 07, 2021
Applicant:
Jx Metals Corporation, Tokyo, JP;
Inventors:
Assignee:
JX METALS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); C30B 15/20 (2006.01);
U.S. Cl.
CPC ...
C30B 29/40 (2013.01); C30B 15/206 (2013.01);
Abstract
Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, a method for producing an indium phosphide single-crystal ingot and a method for producing indium phosphide substrate capable of suppressing concave defects. An indium phosphide substrate has a diameter of 100 mm or less, and at least one of surfaces has zero concave defects detected in the topography channel, by irradiating a laser beam of 405 nm wavelength with S-polarized light on the surface.