The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 12, 2024

Filed:

Jan. 29, 2021
Applicant:

Hitachi, Ltd., Tokyo, JP;

Inventors:

Yuki Niimi, Tokyo, JP;

Hiroko Hanzawa, Tokyo, JP;

Maiko Tanabe, Tokyo, JP;

Kunio Ohyama, Tokyo, JP;

Shizu Takeda, Tokyo, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C12N 5/073 (2010.01); C12M 1/36 (2006.01);
U.S. Cl.
CPC ...
C12N 5/0605 (2013.01); C12M 41/48 (2013.01); C12N 2501/999 (2013.01); C12N 2506/45 (2013.01); C12N 2533/00 (2013.01); C12N 2533/30 (2013.01); C12N 2535/00 (2013.01);
Abstract

A novel cell culture method for inducing differentiation of a pluripotent stem cell into trophoblast and an automatic culture apparatus therefor includes: a first step of culturing the pluripotent stem cell in a presence of a ROCK inhibitor during a first time period; a second step of culturing the pluripotent stem cell, which has been subjected to the first step, without the ROCK inhibitor during a second time period following the first time period; and a step of culturing the pluripotent stem cell, which has been subjected to the second step, in the presence of the ROCK inhibitor during a third time period following the second time period, in which the pluripotent stem cell is cultured in a state of being adhered to a cell culture substrate including a planar mesh through the first to third time periods.


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