The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Feb. 11, 2022
Applicant:

Zf Friedrichshafen Ag, Friedrichshafen, DE;

Inventors:

Michael Meiler, Bayreuth, DE;

Johannes Hager, Marktleugast, DE;

Stefan Hain, Speichersdorf, DE;

Assignee:

ZF Friedrichshafen AG, Friedrichshafen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 7/537 (2006.01); B60L 50/51 (2019.01); G01K 13/00 (2021.01); G01R 19/00 (2006.01); H02M 1/08 (2006.01); H02M 1/32 (2007.01);
U.S. Cl.
CPC ...
H02M 7/537 (2013.01); B60L 50/51 (2019.02); G01K 13/00 (2013.01); G01R 19/0038 (2013.01); H02M 1/08 (2013.01); H02M 1/327 (2021.05); B60L 2210/44 (2013.01); B60L 2240/525 (2013.01); B60L 2240/545 (2013.01); G01K 2217/00 (2013.01);
Abstract

Method for measuring an operating temperature of a power module () that is used for operating an electric vehicle drive, the power module () comprising a plurality of semiconductor switching elements () and drive electronics (), wherein the semiconductor switching elements () can be switched by the drive electronics () in such a way that the semiconductor switching elements () allow or interrupt a drain-source current in order to convert the direct current fed into the power module () at the input side into an output-side alternating current, wherein the method comprises measurement of a voltage present at a point located on a side of a diode () that is connected in series with the semiconductor switching element () and that faces away from the semiconductor switching element (), wherein the method comprises measurement of a drain-source current of the semiconductor switching element () that is generated by a current source (), wherein the method comprises determination of a mathematical dependency between the measured voltage and the measured current.


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