The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Sep. 17, 2019
Applicant:
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventor:
Hubert Bono, Grenoble, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 29/20 (2006.01); H01L 31/18 (2006.01); H01L 33/02 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/02667 (2013.01); H01L 21/2654 (2013.01); H01L 29/2003 (2013.01); H01L 31/1848 (2013.01); H01L 31/1872 (2013.01); H01L 33/0095 (2013.01); H01L 33/025 (2013.01); H01L 33/32 (2013.01);
Abstract
A method of manufacturing an electronic device, including the successive steps of: a) performing an ion implantation of indium or of aluminum into an upper portion of a first single-crystal gallium nitride layer, to make the upper portion of the first layer amorphous and to preserve the crystal structure of a lower portion of the first layer; and b) performing a solid phase recrystallization anneal of the upper portion of the first layer, resulting in transforming the upper portion of the first layer into a crystalline indium gallium nitride or aluminum gallium nitride layer.