The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Oct. 24, 2022
Applicant:
Sensors Unlimited, Inc., Princeton, NJ (US);
Inventors:
Wei Zhang, Princeton, NJ (US);
Douglas Stewart Malchow, Lawrence, NJ (US);
Michael J. Evans, Yardley, PA (US);
Paul L. Bereznycky, Medford, NJ (US);
Sean T. Houlihan, Princeton, NJ (US);
Assignee:
Sensors Unlimited, Inc., Princeton, NJ (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0304 (2006.01); H01L 21/304 (2006.01); H01L 21/3065 (2006.01); H01L 31/0232 (2014.01); H01L 31/101 (2006.01); H01L 31/08 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03046 (2013.01); H01L 21/304 (2013.01); H01L 21/3065 (2013.01); H01L 31/02327 (2013.01); H01L 31/101 (2013.01); H01L 31/1844 (2013.01);
Abstract
A method includes forming an assembly of layers including an InP cap layer on an InGaAs absorption region layer, wherein the InGaAs layer is on an n-InP layer, and wherein an underlying substrate layer underlies the n-InP layer. The method includes removing a portion of the InP cap and n-InP layer by dry etching.