The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Mar. 03, 2020
Applicant:
Innolight Technology (Suzhou) Ltd., Jiangsu, CN;
Inventors:
Chih-Kuo Tseng, Jiangsu, CN;
Guoliang Chen, Jiangsu, CN;
Xiaoyao Li, Jiangsu, CN;
Yuzhou Sun, Jiangsu, CN;
Yue Xiao, Jiangsu, CN;
Assignee:
INNOLIGHT TECHNOLOGY (SUZHOU) LTD., Suzhou, CN;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); G02B 5/18 (2006.01); H01L 31/0352 (2006.01); H01L 31/105 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02161 (2013.01); H01L 31/035272 (2013.01); H01L 31/105 (2013.01); H01L 31/1804 (2013.01); H01L 31/1812 (2013.01); G02B 5/1861 (2013.01);
Abstract
A photodetector with an integrated reflective grating structure includes a substrate, an active layer disposed on the substrate, and a grating structure disposed between the substrate and the active layer. A first doped region is formed on the substrate at a location near the grating structure. A second doped region is formed on a surface of the active layer away from the grating structure. The doping type of the second doped region is different from that of the first doped region.