The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
May. 27, 2021
Fuji Electric Co., Ltd., Kawasaki, JP;
Yoshiaki Toyoda, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor device includes an output-stage element and a detection element, each of the output-stage element and the detection element including: a channel-formation region deposited at an upper part of a drift region; a main electrode region deposited at an upper part of the channel-formation region; and a gate electrode buried via a gate insulating film in one or more first trenches in contact with the main electrode region, the channel-formation region, and the drift region, wherein the first trenches used in common with the detection element and the output-stage element extend in a planar pattern, and a plurality of second trenches extending in parallel to each other in a direction perpendicular to the first trenches interpose the detection element so as to separate the channel-formation region of the output-stage element and the channel-formation region of the detection element from each other.