The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Jan. 05, 2023
Fuji Electric Co., Ltd., Kawasaki, JP;
Tatsuya Naito, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
There is provided a semiconductor device including a drift region of a first conductivity type, a first semiconductor region of the first conductivity type provided above the drift region and having a doping concentration higher than the drift region, a second semiconductor region of a second conductivity type provided between the first semiconductor region and the drift region, and a plurality of trench portions arranged in a first direction and having an extending portion that extends in a second direction perpendicular to the first direction. At least one trench portion of the plurality of trench portions has a first tapered portion at an upper side than a depth position of a lower surface of the second semiconductor region. The width of the first tapered portion in the first direction becomes smaller from a lower side of the first tapered portion toward an upper side of the first tapered portion.