The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Sep. 08, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Shoko Hanagata, Komatsu, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device in which IGBT regions and diode regions are alternately set along a first direction, includes first to third electrodes, and a semiconductor portion. The semiconductor portion includes a collector layer, a low-concentration cathode layer, a high-concentration cathode layer, a drift layer, anode layers, base layers, and an emitter layer. The low-concentration cathode layer and the high-concentration cathode layer are in contact with the first electrode. When the diode region on a lower surface of the semiconductor portion is divided into three equal regions of a first peripheral region, a central region, and a second peripheral region along the first direction, an area ratio of the low-concentration cathode layer in the central region is higher than the area ratio of the low-concentration cathode layer in the first peripheral region and the second peripheral region.