The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Jan. 20, 2023
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventor:
Tatsuo Shimizu, Shinagawa, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/0878 (2013.01); H01L 29/41725 (2013.01); H01L 29/456 (2013.01);
Abstract
A semiconductor device according to an embodiment includes: a silicon carbide layer; a metal layer; and a conductive layer positioned between the silicon carbide layer and the metal layer, the conductive layer containing a silicide of one metal element (M) selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt), and the conductive layer having a carbon concentration of 1×10cmor less.