The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Sep. 03, 2021
SK Hynix Inc., Icheon-si, KR;
Dae Sung Eom, Icheon-si, KR;
SK hynix Inc., Icheon-si, KR;
Abstract
A semiconductor device includes: a first insulating layer, a plurality of first electrodes penetrating the first insulating layer, a plurality of second electrodes penetrating the first insulating layer, the plurality of second electrodes being located between the plurality of first electrodes: a first high dielectric constant layer having a dielectric constant higher than a dielectric constant of the first insulating layer, a plurality of third electrodes penetrating the first high dielectric constant layer, the plurality of third electrodes being respectively connected to the plurality of first electrodes, and a plurality of fourth electrodes penetrating the first high dielectric constant layer, the plurality of fourth electrodes being located between the plurality of third electrodes.