The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Jun. 16, 2022
Applicant:

Lumileds Llc, San Jose, CA (US);

Inventors:

Robert Armitage, Cupertino, CA (US);

Isaac Wildeson, Nashua, NH (US);

Assignee:

Lumileds LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); H01L 33/0075 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01);
Abstract

Described are arrays of light emitting diode (LED) devices and methods for their manufacture. An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, the top surface comprising a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. There is a first trench separating the first mesa and the adjacent mesa, n-type metallization in the first trench and in electrical contact with the first color active region and the second color active region of the adjacent mesa, and p-type metallization contacts on the n-type layer of the first mesa and on the p-type layer of the adjacent mesa.


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