The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Aug. 22, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seung Min Shin, Suwon-si, KR;

Sang Jin Park, Suwon-si, KR;

Hae Won Choi, Daejeon, KR;

Jang Jin Lee, Seoul, KR;

Ji Hwan Park, Hwaseong-si, KR;

Kun Tack Lee, Suwon-si, KR;

Koriakin Anton, Cheonan-si, KR;

Joon Ho Won, Suwon-si, KR;

Jin Yeong Sung, Goesan-gun, KR;

Pil Kyun Heo, Yongin-si, KR;

Assignees:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

SEMES CO., LTD., Cheonan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); G03F 7/16 (2006.01); H01L 21/677 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67196 (2013.01); G03F 7/168 (2013.01); H01L 21/67017 (2013.01); H01L 21/67173 (2013.01); H01L 21/67178 (2013.01); H01L 21/6719 (2013.01); H01L 21/67225 (2013.01); H01L 21/67748 (2013.01);
Abstract

An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.


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