The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Sep. 14, 2022
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Shunpei Yamazaki, Setagaya, JP;

Junichiro Sakata, Atsugi, JP;

Hiroki Ohara, Sagamihara, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01); H01L 21/465 (2006.01); H01L 21/477 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/465 (2013.01); H01L 21/02565 (2013.01); H01L 21/28176 (2013.01); H01L 21/324 (2013.01); H01L 21/477 (2013.01); H01L 29/04 (2013.01); H01L 29/045 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/78603 (2013.01); H01L 29/78606 (2013.01); H01L 29/78618 (2013.01); H01L 29/78642 (2013.01); H01L 29/78648 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.


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