The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Feb. 14, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Xiaojia Jia, San Jose, CA (US);

Swaroop Kaza, San Jose, CA (US);

Laidong Wang, San Jose, CA (US);

Jiacen Guo, Sunnyvale, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/102 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01);
Abstract

The present disclosure provides for improving data retention reliability. During a programming operation associated with a memory cell, after the memory cell passes verification of a first verification voltage level, a second verification voltage level can be applied to the memory cell. Based on a comparison of the voltage in the memory cell with the second verification voltage level, a bit line voltage may be applied. Based on the applied bit line voltage, fast bits associated with the memory cell can be upshifted to an upper portion of a final voltage distribution associated with the programming operation. Upshifting the fast bits counteracts the downshifting effect in a final voltage distribution that may be caused by charge leakage or electron loss.


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