The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Nov. 11, 2019
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Timothy William Weidman, Sunnyvale, CA (US);
Katie Nardi, San Jose, CA (US);
Chenghao Wu, Berkeley, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/004 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2004 (2013.01); G03F 7/327 (2013.01); G03F 7/0042 (2013.01);
Abstract
Imaging layers on the surface of a substrate may be patterned using next generation lithographic techniques, and the resulting patterned film may be used as a lithographic mask, for example, for production of a semiconductor device.
Weidman, Timothy. (2024). Methods for making hard masks useful in next-generation lithography (U.S. Patent No. 11921427). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11921427
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile