The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

May. 15, 2019
Applicant:

Nippon Telegraph and Telephone Corporation, Tokyo, JP;

Inventors:

Kotaro Takeda, Musashino, JP;

Yusuke Nasu, Musashino, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/126 (2006.01); H01L 31/0224 (2006.01); H01L 31/101 (2006.01);
U.S. Cl.
CPC ...
G02B 6/126 (2013.01); H01L 31/022408 (2013.01); H01L 31/1013 (2013.01);
Abstract

A photodetector is realized which does not need an additional circuit for an inspection and may perform a characteristic evaluation inspection of optical input and electrical output such as optical sensitivity and OE characteristics of a photodetector alone with respect to wavelength and temperature dependent characteristics. A photodetector is provided in which light absorption layers are formed on a semiconductor substrate, the photodetector detects signal light incident on the light absorption layers from a direction in a substrate surface of the semiconductor substrate, and the light absorption layers have a portion not covered by an electrode for photocurrent detection connected with the light absorption layers in a case where the substrate surface of the semiconductor substrate is seen from a direction from an outside of the substrate surface.


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