The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Aug. 05, 2019
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
In an embodiment method for growing a rare earth oxide crystal, a surface of a Si substrate is cleaned by carrying out treatments using chemical solutions such as a mixed sulfuric acid-hydrogen peroxide solution, hot nitric acid, or diluted hydrofluoric acid several times to remove impurities on the surface of the Si substrate. A silicon oxide layer including amorphous SiOis formed on the Si substrate. A metal layer including a rare earth metal is formed in contact with an upper surface of the silicon oxide layer. The silicon oxide layer is reacted with the metal layer through heating to form a first crystal layer including a rare earth oxide crystal obtained by oxidizing the rare earth metal on the Si substrate.