The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

May. 19, 2023
Applicants:

Lanzhou Institute of Chemical Physics, Cas, Lanzhou, CN;

Yantai Zhongke Research Institute of Advanced Materials and Green Chemical Engineering, Yantai, CN;

Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai, CN;

Inventors:

Zhuhui Qiao, Lanzhou, CN;

Lujie Wang, Lanzhou, CN;

Tongyang Li, Lanzhou, CN;

Ziyue Wang, Lanzhou, CN;

Yuan Yu, Lanzhou, CN;

Huaguo Tang, Lanzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 41/45 (2006.01); C04B 35/587 (2006.01); C04B 35/626 (2006.01); C04B 35/645 (2006.01); C04B 35/76 (2006.01); C04B 41/00 (2006.01);
U.S. Cl.
CPC ...
C04B 41/4556 (2013.01); C04B 35/587 (2013.01); C04B 35/6261 (2013.01); C04B 35/645 (2013.01); C04B 35/76 (2013.01); C04B 41/0072 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3813 (2013.01); C04B 2235/3873 (2013.01); C04B 2235/3891 (2013.01); C04B 2235/404 (2013.01); C04B 2235/428 (2013.01); C04B 2235/5216 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/656 (2013.01); C04B 2235/658 (2013.01); C04B 2235/85 (2013.01);
Abstract

Disclosed are a silicon nitride ceramic sintered body and preparation method thereof. The silicon nitride ceramic sintered body includes a sintered bulk and a hard surface layer having a thickness of 10-1000 μm, formed on a surface of the sintered bulk, wherein the sintered bulk comprises a first silicon nitride crystalline phase and a first grain boundary phase; the hard surface layer comprises a second silicon nitride crystalline phase and a second grain boundary phase; the first grain boundary phase comprises a metal tungsten phase being tungsten elementary substance and/or a tungsten alloy; the second grain boundary phase comprises tungsten carbide particles; tungsten element in the metal tungsten phase accounts for 80-100 wt % of total tungsten element in the first grain boundary phase; and tungsten element in the tungsten carbide particles accounts for 60-100 wt % of total tungsten element in the second grain boundary phase.


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