The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Aug. 31, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Takao Kosaka, Mie, JP;

Hiroki Tokuhira, Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H10N 70/8828 (2023.02); H10B 63/24 (2023.02); H10B 63/84 (2023.02); H10N 70/235 (2023.02); H10N 70/841 (2023.02); H10N 70/8822 (2023.02); H10N 70/8825 (2023.02); G11C 2013/008 (2013.01);
Abstract

A resistance change device of an embodiment includes: a first electrode; a second electrode; and a stack disposed between these electrodes, and including a first layer containing a resistance change material and a second layer in contact with the first layer. The resistance change material contains at least one of a first element such as Ge and a second element such as Sb, and at least one third element selected from Te, Se, S, and O. The second layer contains a crystal material containing at least one selected from a group consisting of a first material having a composition represented by (Ti,Zr,Hf)CoSb, (Zr,Hf)NiSn, or Fe(Nb,Zr,Hf)(Sb,Sn), a second material having a composition represented by Fe(V,Hf,W)(Al,Si), and a third material having a composition represented by Mg(Si,Ge,Sn).


Find Patent Forward Citations

Loading…