The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Oct. 23, 2020
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Se Han Kwon, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H10B 12/00 (2023.01); G11C 11/4097 (2006.01); G11C 11/408 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H10B 12/50 (2023.02); G11C 11/4085 (2013.01); G11C 11/4097 (2013.01); H01L 23/5226 (2013.01); H10B 12/09 (2023.02); H10B 12/30 (2023.02); H10B 12/0335 (2023.02); H10B 12/482 (2023.02);
Abstract

A semiconductor device includes a substrate including a memory cell region and a peripheral circuit region, the peripheral circuit region including a first peripheral circuit region including a first transistor and a second peripheral circuit region including a second transistor; a storage node contact plug positioned in an upper portion of the substrate in the memory cell region; a landing pad over the storage node contact plug; a first metal wire coupled to the first transistor; and a second metal wire coupled to the second transistor, wherein a thickness of the landing pad and a thickness of the first metal wire are smaller than a thickness of the second metal wire.


Find Patent Forward Citations

Kwon, Se. (2024). Semiconductor device and method for fabricating the same (U.S. Patent No. 11917816). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11917816

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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