The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Mar. 20, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyosub Kim, Seoul, KR;
Keunnam Kim, Yongin-si, KR;
Dongoh Kim, Daegu, KR;
Bongsoo Kim, Yongin-si, KR;
Euna Kim, Seoul, KR;
Chansic Yoon, Anyang-si, KR;
Kiseok Lee, Hwaseong-si, KR;
Hyeonok Jung, Daejeon, KR;
Sunghee Han, Hwaseong-si, KR;
Yoosang Hwang, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.