The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Sep. 02, 2022
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Naoya Takai, Yukuhashi Fukuoka, JP;

Yukihiro Takifuji, Chikujo Fukuoka, JP;

Keita Saito, Buzen Fukuoka, JP;

Kazuki Tanaka, Kitakyushu Fukuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/00 (2006.01); H03K 17/081 (2006.01); H03K 17/687 (2006.01); H03K 17/73 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6874 (2013.01); H03K 17/08108 (2013.01); H03K 17/73 (2013.01);
Abstract

A semiconductor relay device includes a conversion circuit configured to receive an input signal from outside and pass a first current to a first node based on the input signal. A zener diode has an anode coupled to a second node and a cathode coupled to the first node. A resistor is coupled between the second node and a third node. A number n of diodes are serially coupled. A thyristor has an anode coupled to the first node, a cathode coupled to the second node, and a control terminal coupled to the third node. A transistor has a gate coupled to the first node. An anode of a diode at a first end of the n diodes is coupled to the first node, and a cathode of a diode at a second end of the n diodes is coupled to a third node.


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