The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Mar. 01, 2022
Infineon Technologies Austria Ag, Villach, AT;
Sergio Morini, Pavia, IT;
Andrea Lampredi, Leghorn, IT;
Salviano Marino, Latronico, IT;
Daniele Miatton, Carbonara al Ticino, IT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A method for driving a power transistor includes comparing a measurement signal that is representative of a load current to a comparator threshold that corresponds to an overcurrent threshold; generating a first fault signal when the measurement signal exceeds the comparator threshold for a first time interval; generating a second fault signal when the measurement signal exceeds the comparator threshold for a second time interval that is greater than the first time interval; regulating a control voltage provided to the control terminal of the transistor to turn off the transistor in response to the second fault signal; and in response to the first fault signal, adjusting the control voltage to an adjusted voltage level in order to limit the load current to a reduced current level that is preconfigured to be greater than the overcurrent threshold. The adjusted voltage level is sufficient to maintain the power transistor in an on-state.