The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Jun. 30, 2021
Applicant:

Taiyo Yuden Co., Ltd., Tokyo, JP;

Inventors:

Toshiharu Nakazato, Tokyo, JP;

Shinji Yamamoto, Tokyo, JP;

Ryouta Iwabuchi, Tokyo, JP;

Naoki Takahashi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 9/145 (2006.01); H03H 9/64 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02102 (2013.01); H03H 9/0211 (2013.01); H03H 9/02015 (2013.01); H03H 9/02157 (2013.01); H03H 9/02543 (2013.01); H03H 9/145 (2013.01); H03H 9/6406 (2013.01);
Abstract

An acoustic wave device includes a support substrate, a piezoelectric layer provided over the support substrate, comb-shaped electrodes disposed on the piezoelectric layer, each of the comb-shaped electrodes including electrode fingers exciting an acoustic wave, a temperature compensation film interposed between the support substrate and the piezoelectric layer and having a temperature coefficient of an elastic constant opposite in sign to that of the piezoelectric layer, a boundary layer interposed between the support substrate and the temperature compensation film, an acoustic velocity of a bulk wave propagating through the boundary layer being higher than an acoustic velocity of a bulk wave propagating through the temperature compensation film and being lower than an acoustic velocity of a bulk wave propagating through the support substrate, and an intermediate layer interposed between the support substrate and the boundary layer and having a Q factor less than a Q factor of the boundary layer.


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