The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Sep. 30, 2020
Applicant:

Shanxi University, Taiyuan, CN;

Inventors:

Jing Su, Taiyuan, CN;

Huiqi Yang, Taiyuan, CN;

Huadong Lu, Taiyuan, CN;

Kunchi Peng, Taiyuan, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/04 (2006.01); H01S 3/08 (2023.01); H01S 3/00 (2006.01); H01S 3/16 (2006.01); H01S 3/08031 (2023.01); H01S 3/102 (2006.01); G01K 17/00 (2006.01); H01S 3/081 (2006.01); H01S 3/042 (2006.01);
U.S. Cl.
CPC ...
H01S 3/08072 (2013.01); H01S 3/0014 (2013.01); H01S 3/0405 (2013.01); H01S 3/08031 (2013.01); H01S 3/1022 (2013.01); H01S 3/1611 (2013.01); H01S 3/1673 (2013.01); G01K 17/003 (2013.01); H01S 3/042 (2013.01); H01S 3/0816 (2013.01);
Abstract

A device and a method for measuring a thermal load caused by energy transfer upconversion in a laser gain crystal. Increasing the pump power multiple times so that the power meter obtains multiple thresholds for a single-frequency laser; obtaining an average pump threshold of the output laser; obtaining cavity parameters of the single-frequency laser; obtaining thermal focal lengths on the tangential and sagittal planes of the laser gain crystal inside the single-frequency laser; obtaining individual ABCD matrices of the laser system on the tangential and the sagittal planes; obtaining a thermal load at the threshold based on the ABCD transfer matrix of the laser gain crystal on the tangential plane, the ABCD transfer matrix of the laser gain crystal on the sagittal plane, and the average pump threshold of the laser system; obtaining a thermal load caused by ETU at threshold based on the thermal load at the threshold.


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