The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Dec. 12, 2019
Applicant:

Plessey Semiconductors Limited, Plymouth, GB;

Inventors:

Andrea Pinos, Plymouth, GB;

Samir Mezouari, Plymouth, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 27/156 (2013.01); H01L 33/0075 (2013.01); H01L 33/62 (2013.01); H01L 2933/0066 (2013.01);
Abstract

An active matrix LED array precursor forming a precursor to a micro LED array is provided. The active matrix LED array precursor comprises a common first semiconducting layer comprising a substantially undoped Group III-nitride, a plurality of transistor-driven LED precursors, and a common source contact. Each transistor-driven LED precursor comprises a monolithic light emitting diode (LED) structure comprising a plurality of III-nitride semiconducting layers, a barrier semiconducting layer, and a gate contact. Each monolithic LED structure is formed on a portion of the common semiconducting layer. The barrier semiconducting is layer formed on a portion of the common semiconducting layer encircling the LED structure and configured to induce a two-dimensional electron channel layer at the interface between the common semiconducting layer and the barrier semiconducting layer. The gate contact is formed over a portion of the two-dimensional electron channel layer, the gate contact encircling the LED structure. The common source contact is configured to form an ohmic contact to each portion of the two-dimensional electron channel layer such that a high electron mobility transistor is provided between the common source contact and each monolithic LED structure for driving each LED structure.


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