The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Dec. 29, 2021
Toyoda Gosei Co., Ltd., Kiyosu, JP;
Meijo University, Nagoya, JP;
Yoshiki Saito, Kiyosu, JP;
Shinya Boyama, Kiyosu, JP;
Shinichi Matsui, Kiyosu, JP;
Hiroshi Miwa, Kiyosu, JP;
Kengo Nagata, Kiyosu, JP;
Tetsuya Takeuchi, Aichi-ken, JP;
Hisanori Ishiguro, Aichi-ken, JP;
TOYODA GOSEI CO., LTD., Kiyosu, JP;
MEIJO UNIVERSITY, Aichi-Ken, JP;
Abstract
A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a Natmosphere at not less than 650° C. or in a N+Oatmosphere at not less than 500° C.